AFT09S200W02GNR3
NXP USA Inc.
NXP USA Inc.
FET RF 70V 960MHZ PLD
$0.00
Available to order
Reference Price (USD)
250+
$86.57568
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The AFT09S200W02GNR3 series by NXP USA Inc. sets new benchmarks in RF transistor technology. With patented noise-reduction architecture and gold metallization for corrosion resistance, these MOSFETs dominate in scientific research and satellite communications. Their plug-and-play compatibility simplifies integration. Elevate your design get a personalized quote within 24 hours!
Specifications
- Product Status: Obsolete
- Transistor Type: LDMOS
- Frequency: 960MHz
- Gain: 19.2dB
- Voltage - Test: 28 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 1.4 A
- Power - Output: 56W
- Voltage - Rated: 70 V
- Package / Case: OM-780-2G
- Supplier Device Package: OM-780-2 Gull
Related Products
NXP USA Inc.
A2T18S261W12NR3
Freescale Semiconductor
MRF6VP3091NBR1
STMicroelectronics
LET9070FB
Ampleon USA Inc.
BLF8G38LS-75V
Broadcom Limited
ATF-501P8-TR2
Freescale Semiconductor
MRF6S21050LSR5
NXP USA Inc.
BLF4G10LS-160,112
Wolfspeed, Inc.
PXAC261002FC-V1
Freescale Semiconductor
MRF6V2300NR1
NXP USA Inc.