PTFA080551E V1
Infineon Technologies
Infineon Technologies
IC FET RF LDMOS 55W H-36265-2
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Discover high-performance PTFA080551E V1 RF MOSFETs from Infineon Technologies, designed for superior signal amplification in demanding applications. These transistors feature low noise, high gain, and excellent thermal stability, making them ideal for RF and microwave circuits. Commonly used in communication systems, radar, and wireless infrastructure, our FETs ensure reliable performance in critical environments. Contact us today for pricing and technical support let s power your next project together!
Specifications
- Product Status: Discontinued at Digi-Key
- Transistor Type: LDMOS
- Frequency: 960MHz
- Gain: 18.5dB
- Voltage - Test: 28 V
- Current Rating (Amps): 10µA
- Noise Figure: -
- Current - Test: 600 mA
- Power - Output: 55W
- Voltage - Rated: 65 V
- Package / Case: H-36265-2
- Supplier Device Package: H-36265-2
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