NE5550779A-T1-A
Renesas Electronics America Inc
Renesas Electronics America Inc
RF POWER N-CHANNEL, MOSFET
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Discover high-performance NE5550779A-T1-A RF MOSFETs from Renesas Electronics America Inc, designed for superior signal amplification in demanding applications. These transistors feature low noise, high gain, and excellent thermal stability, making them ideal for RF and microwave circuits. Commonly used in communication systems, radar, and wireless infrastructure, our FETs ensure reliable performance in critical environments. Contact us today for pricing and technical support let s power your next project together!
Specifications
- Product Status: Obsolete
- Transistor Type: LDMOS
- Frequency: 900MHz
- Gain: 22dB
- Voltage - Test: 7.5 V
- Current Rating (Amps): 2.1A
- Noise Figure: -
- Current - Test: 140 mA
- Power - Output: 38.5dBm
- Voltage - Rated: 30 V
- Package / Case: 4-SMD, Flat Leads
- Supplier Device Package: 79A
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