AFT09S200W02NR3
NXP USA Inc.
NXP USA Inc.
FET RF 70V 960MHZ PLD
$0.00
Available to order
Reference Price (USD)
250+
$86.57568
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Unlock next-gen RF performance with AFT09S200W02NR3 from NXP USA Inc.. These MOSFETs feature innovative gallium nitride (GaN) technology for higher efficiency in compact form factors, revolutionizing telecom infrastructure and defense electronics. Their lead-free compliance meets global environmental standards. Let s discuss your application needs contact our sales team now!
Specifications
- Product Status: Obsolete
- Transistor Type: LDMOS
- Frequency: 960MHz
- Gain: 19.2dB
- Voltage - Test: 28 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 1.4 A
- Power - Output: 56W
- Voltage - Rated: 70 V
- Package / Case: OM-780-2
- Supplier Device Package: OM-780-2
Related Products
onsemi
J305
Ampleon USA Inc.
BLF7G15LS-200,112
STMicroelectronics
PD55003STR-E
Renesas Electronics America Inc
NE5550779A-T1-A
NXP USA Inc.
BF1205C,115
Freescale Semiconductor
MRF8S21100HR5
STMicroelectronics
PD85025STR-E
Freescale Semiconductor
MRF24300NR3
NXP USA Inc.
MRF6V14300HSR3
Broadcom Limited