PMZB290UNE2YL
Nexperia USA Inc.
Nexperia USA Inc.
MOSFET N-CH 20V 1.2A DFN1006B-3
$0.37
Available to order
Reference Price (USD)
10,000+
$0.06834
30,000+
$0.06460
50,000+
$0.05824
100,000+
$0.05712
Exquisite packaging
Discount
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose PMZB290UNE2YL by Nexperia USA Inc.. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with PMZB290UNE2YL inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 320mOhm @ 1.2A, 4.5V
- Vgs(th) (Max) @ Id: 950mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 46 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 350mW (Ta), 5.43W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DFN1006B-3
- Package / Case: 3-XFDFN
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