STW58N65DM2AG
STMicroelectronics
STMicroelectronics
MOSFET N-CH 650V 48A TO247
$12.23
Available to order
Reference Price (USD)
1+
$11.83000
30+
$9.69667
120+
$8.75050
510+
$7.33151
1,020+
$6.38550
Exquisite packaging
Discount
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Boost your electronic applications with STW58N65DM2AG, a reliable Transistors - FETs, MOSFETs - Single by STMicroelectronics. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, STW58N65DM2AG meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 65mOhm @ 24A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
- Vgs (Max): ±25V
- Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 360W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-3
- Package / Case: TO-247-3
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