PSMN1R2-25YLDX
Nexperia USA Inc.
Nexperia USA Inc.
MOSFET N-CH 25V 100A LFPAK56
$1.74
Available to order
Reference Price (USD)
1,500+
$0.56677
3,000+
$0.52899
7,500+
$0.50254
10,500+
$0.48365
Exquisite packaging
Discount
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Upgrade your electronic designs with PSMN1R2-25YLDX by Nexperia USA Inc., a top-tier choice in Discrete Semiconductor Products. Specifically crafted for Transistors - FETs, MOSFETs - Single applications, this product offers superior power handling and energy efficiency. Key features include high voltage tolerance, minimal power loss, and robust durability, making it perfect for switching and amplification tasks. Whether for industrial machinery, renewable energy systems, or portable devices, PSMN1R2-25YLDX ensures reliable operation. Ready to integrate this component into your project? Submit an inquiry now for pricing and availability!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 25 V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 1.2mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 60.3 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 4327 pF @ 12 V
- FET Feature: Schottky Diode (Body)
- Power Dissipation (Max): 172W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LFPAK56, Power-SO8
- Package / Case: SC-100, SOT-669
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