RJK60S4DPP-E0#T2
Renesas Electronics America Inc
Renesas Electronics America Inc
MOSFET N-CH 600V 16A TO220FP
$4.26
Available to order
Reference Price (USD)
1+
$4.26000
500+
$4.2174
1000+
$4.1748
1500+
$4.1322
2000+
$4.0896
2500+
$4.047
Exquisite packaging
Discount
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Discover high-performance RJK60S4DPP-E0#T2 from Renesas Electronics America Inc, a leading solution in the Discrete Semiconductor Products category. Our Transistors - FETs, MOSFETs - Single are designed for efficiency and reliability, making them ideal for various electronic applications. These components feature low on-resistance, fast switching speeds, and excellent thermal performance, ensuring optimal functionality in power management and amplification circuits. Commonly used in automotive, industrial, and consumer electronics, RJK60S4DPP-E0#T2 delivers consistent performance under demanding conditions. Interested in learning more? Contact us today for a detailed quote and technical support!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: 290mOhm @ 8A, 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
- Vgs (Max): -
- Input Capacitance (Ciss) (Max) @ Vds: 988 pF @ 25 V
- FET Feature: Super Junction
- Power Dissipation (Max): 29.9W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220FP
- Package / Case: TO-220-3 Full Pack
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