PMPB08R6ENX
Nexperia USA Inc.
Nexperia USA Inc.
MOSFET N-CH 30V 11A DFN2020M-6
$0.14
Available to order
Reference Price (USD)
1+
$0.14403
500+
$0.1425897
1000+
$0.1411494
1500+
$0.1397091
2000+
$0.1382688
2500+
$0.1368285
Exquisite packaging
Discount
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Experience the power of PMPB08R6ENX, a premium Transistors - FETs, MOSFETs - Single from Nexperia USA Inc.. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, PMPB08R6ENX is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: 10.5mOhm @ 11A, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 20.6 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 1.9W (Ta), 12.5W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DFN2020MD-6
- Package / Case: 6-UDFN Exposed Pad
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