IPL60R385CPAUMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 600V 9A 4VSON
$1.33
Available to order
Reference Price (USD)
3,000+
$1.16454
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover high-performance IPL60R385CPAUMA1 from Infineon Technologies, a leading solution in the Discrete Semiconductor Products category. Our Transistors - FETs, MOSFETs - Single are designed for efficiency and reliability, making them ideal for various electronic applications. These components feature low on-resistance, fast switching speeds, and excellent thermal performance, ensuring optimal functionality in power management and amplification circuits. Commonly used in automotive, industrial, and consumer electronics, IPL60R385CPAUMA1 delivers consistent performance under demanding conditions. Interested in learning more? Contact us today for a detailed quote and technical support!
Specifications
- Product Status: Not For New Designs
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 385mOhm @ 5.2A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 340µA
- Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 83W (Tc)
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-VSON-4
- Package / Case: 4-PowerTSFN
Related Products
Diodes Incorporated
BSS123K-7
Panjit International Inc.
PJE8428_R1_00001
Infineon Technologies
IPZ60R041P6FKSA1
Rohm Semiconductor
RCX700N20
Infineon Technologies
IPU60R1K0CEAKMA2
Renesas Electronics America Inc
2SK1947-E
IXYS
IXTA52P10P-TRL
Microchip Technology
TN0104N3-G
Vishay Siliconix
IRFU220PBF
Renesas Electronics America Inc