PJE8428_R1_00001
Panjit International Inc.
Panjit International Inc.
30V N-CHANNEL ENHANCEMENT MODE M
$0.49
Available to order
Reference Price (USD)
1+
$0.49000
500+
$0.4851
1000+
$0.4802
1500+
$0.4753
2000+
$0.4704
2500+
$0.4655
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your circuit performance with PJE8428_R1_00001, a premium Transistors - FETs, MOSFETs - Single from Panjit International Inc.. As part of the Discrete Semiconductor Products lineup, this MOSFET excels in delivering high-speed switching and low power consumption. Its advanced design reduces heat generation and improves efficiency, suitable for power supplies, motor controls, and LED lighting. Trust PJE8428_R1_00001 for consistent quality and long-lasting performance. For bulk orders or custom specifications, reach out to our sales team today!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
- Rds On (Max) @ Id, Vgs: 1.2Ohm @ 300mA, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 4.5 V
- Vgs (Max): ±10V
- Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 300mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-523
- Package / Case: SOT-523
Related Products
Infineon Technologies
IPZ60R041P6FKSA1
Rohm Semiconductor
RCX700N20
Infineon Technologies
IPU60R1K0CEAKMA2
Renesas Electronics America Inc
2SK1947-E
IXYS
IXTA52P10P-TRL
Microchip Technology
TN0104N3-G
Vishay Siliconix
IRFU220PBF
Renesas Electronics America Inc
NP36P06SLG-E1-AY
Fairchild Semiconductor
FDD7030BL
Microchip Technology