PMN230ENEAX
Nexperia USA Inc.
Nexperia USA Inc.
MOSFET N-CH 60V 1.8A 6TSOP
$0.50
Available to order
Reference Price (USD)
1+
$0.50000
500+
$0.495
1000+
$0.49
1500+
$0.485
2000+
$0.48
2500+
$0.475
Exquisite packaging
Discount
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Nexperia USA Inc. presents PMN230ENEAX, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, PMN230ENEAX delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 222mOhm @ 1.8A, 10V
- Vgs(th) (Max) @ Id: 2.7V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 3.8 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 625mW (Ta), 5.4W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-TSOP
- Package / Case: SC-74, SOT-457
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