NXV65UPR
Nexperia USA Inc.
Nexperia USA Inc.
NXV65UP/SOT23/TO-236AB
$0.46
Available to order
Reference Price (USD)
1+
$0.46000
500+
$0.4554
1000+
$0.4508
1500+
$0.4462
2000+
$0.4416
2500+
$0.437
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover NXV65UPR, a versatile Transistors - FETs, MOSFETs - Single solution from Nexperia USA Inc., a trusted name in Discrete Semiconductor Products. This MOSFET combines high power density with low on-resistance, perfect for compact and energy-efficient designs. Applications include solar inverters, electric vehicles, and wearable technology. Interested in this innovative component? Send us your inquiry now for more information!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs: 70mOhm @ 2.1A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 4.5 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 458 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 340mW (Ta), 2.1W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-236AB
- Package / Case: TO-236-3, SC-59, SOT-23-3
Related Products
onsemi
FQB8N60CTM
STMicroelectronics
STL130N8F7
Fairchild Semiconductor
FDD24AN06LA0
Toshiba Semiconductor and Storage
TK8R2A06PL,S4X
Toshiba Semiconductor and Storage
TK65E10N1,S1X
Vishay Siliconix
SIR876BDP-T1-RE3
onsemi
NVTFS4C25NTAG
IXYS
IXTH52N65X
Vishay Siliconix
IRFR120PBF-BE3
STMicroelectronics