PJMB390N65EC_R2_00601
Panjit International Inc.
Panjit International Inc.
650V/ 390MOHM / 10A/ EASY TO DRI
$2.38
Available to order
Reference Price (USD)
1+
$2.38000
500+
$2.3562
1000+
$2.3324
1500+
$2.3086
2000+
$2.2848
2500+
$2.261
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose PJMB390N65EC_R2_00601 by Panjit International Inc.. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with PJMB390N65EC_R2_00601 inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 390mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 726 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 87.5W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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