RS6P100BHTB1
Rohm Semiconductor
Rohm Semiconductor
NCH 100V 100A, HSOP8, POWER MOSF
$3.37
Available to order
Reference Price (USD)
1+
$3.37000
500+
$3.3363
1000+
$3.3026
1500+
$3.2689
2000+
$3.2352
2500+
$3.2015
Exquisite packaging
Discount
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Enhance your circuit performance with RS6P100BHTB1, a premium Transistors - FETs, MOSFETs - Single from Rohm Semiconductor. As part of the Discrete Semiconductor Products lineup, this MOSFET excels in delivering high-speed switching and low power consumption. Its advanced design reduces heat generation and improves efficiency, suitable for power supplies, motor controls, and LED lighting. Trust RS6P100BHTB1 for consistent quality and long-lasting performance. For bulk orders or custom specifications, reach out to our sales team today!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 5.9mOhm @ 90A, 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 104W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-HSOP
- Package / Case: 8-PowerTDFN