IGLD60R070D1AUMA3
Infineon Technologies
Infineon Technologies
GANFET N-CH
$25.42
Available to order
Reference Price (USD)
1+
$25.42000
500+
$25.1658
1000+
$24.9116
1500+
$24.6574
2000+
$24.4032
2500+
$24.149
Exquisite packaging
Discount
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IGLD60R070D1AUMA3 by Infineon Technologies is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, IGLD60R070D1AUMA3 ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: 1.6V @ 2.6mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): -10V
- Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 114W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-LSON-8-1
- Package / Case: 8-LDFN Exposed Pad
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