PHKD13N03LT,518
NXP USA Inc.
NXP USA Inc.
SMALL SIGNAL FIELD-EFFECT TRANSI
$0.25
Available to order
Reference Price (USD)
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$0.25000
500+
$0.2475
1000+
$0.245
1500+
$0.2425
2000+
$0.24
2500+
$0.2375
Exquisite packaging
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The PHKD13N03LT,518 from NXP USA Inc. is a top choice in the Discrete Semiconductor Products category, particularly for Transistors - FETs, MOSFETs - Arrays. With features like high breakdown voltage, low gate drive, and excellent thermal performance, these components are ideal for power electronics and high-frequency applications. Whether for consumer electronics or industrial machinery, PHKD13N03LT,518 delivers consistent quality. Contact us now to learn more and secure your supply of NXP USA Inc. s premium semiconductors.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 10.4A
- Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 10.7nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 752pF @ 15V
- Power - Max: 3.57W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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