Shopping cart

Subtotal: $0.00

IPG20N06S2L65AATMA1

Infineon Technologies
IPG20N06S2L65AATMA1 Preview
Infineon Technologies
MOSFET 2N-CH 55V 20A 8TDSON
$1.13
Available to order
Reference Price (USD)
5,000+
$0.54687
10,000+
$0.52631
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 20A
  • Rds On (Max) @ Id, Vgs: 65mOhm @ 15A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 14µA
  • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 410pF @ 25V
  • Power - Max: 43W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount, Wettable Flank
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: PG-TDSON-8-10

Related Products

Advanced Linear Devices Inc.

ALD210800ASCL

Toshiba Semiconductor and Storage

SSM6P15FU,LF

Diodes Incorporated

DMC3025LSDQ-13

Diodes Incorporated

DMN3018SSD-13

Infineon Technologies

FF6MR12KM1PHOSA1

Advanced Linear Devices Inc.

ALD210802PCL

Fairchild Semiconductor

FDS6993

Top