FF6MR12KM1PHOSA1
Infineon Technologies
Infineon Technologies
MEDIUM POWER 62MM
$532.68
Available to order
Reference Price (USD)
1+
$532.68000
500+
$527.3532
1000+
$522.0264
1500+
$516.6996
2000+
$511.3728
2500+
$506.046
Exquisite packaging
Discount
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The FF6MR12KM1PHOSA1 from Infineon Technologies is a top choice in the Discrete Semiconductor Products category, particularly for Transistors - FETs, MOSFETs - Arrays. With features like high breakdown voltage, low gate drive, and excellent thermal performance, these components are ideal for power electronics and high-frequency applications. Whether for consumer electronics or industrial machinery, FF6MR12KM1PHOSA1 delivers consistent quality. Contact us now to learn more and secure your supply of Infineon Technologies s premium semiconductors.
Specifications
- Product Status: Last Time Buy
- FET Type: 2 N-Channel (Half Bridge)
- FET Feature: Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 250A (Tc)
- Rds On (Max) @ Id, Vgs: 5.81mOhm @ 250A, 15V
- Vgs(th) (Max) @ Id: 5.15V @ 80mA
- Gate Charge (Qg) (Max) @ Vgs: 496nC @ 15V
- Input Capacitance (Ciss) (Max) @ Vds: 14700pF @ 800V
- Power - Max: -
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: AG-62MM
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