P3M12025K4
PN Junction Semiconductor
PN Junction Semiconductor
SICFET N-CH 1200V 112A TO-247-4
$28.74
Available to order
Reference Price (USD)
1+
$28.74000
500+
$28.4526
1000+
$28.1652
1500+
$27.8778
2000+
$27.5904
2500+
$27.303
Exquisite packaging
Discount
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Enhance your circuit performance with P3M12025K4, a premium Transistors - FETs, MOSFETs - Single from PN Junction Semiconductor. As part of the Discrete Semiconductor Products lineup, this MOSFET excels in delivering high-speed switching and low power consumption. Its advanced design reduces heat generation and improves efficiency, suitable for power supplies, motor controls, and LED lighting. Trust P3M12025K4 for consistent quality and long-lasting performance. For bulk orders or custom specifications, reach out to our sales team today!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 112A
- Drive Voltage (Max Rds On, Min Rds On): 15V
- Rds On (Max) @ Id, Vgs: 35mOhm @ 50A, 15V
- Vgs(th) (Max) @ Id: 2.2V @ 50mA (Typ)
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): +19V, -8V
- Input Capacitance (Ciss) (Max) @ Vds: -
- FET Feature: -
- Power Dissipation (Max): 577W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-4L
- Package / Case: TO-247-4
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