FQA10N80C-F109
onsemi
onsemi
MOSFET N-CH 800V 10A TO3P
$2.69
Available to order
Reference Price (USD)
1+
$4.02000
10+
$3.59000
450+
$2.65669
900+
$2.15408
1,350+
$2.01047
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
onsemi presents FQA10N80C-F109, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, FQA10N80C-F109 delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Last Time Buy
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800 V
- Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 1.1Ohm @ 5A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 240W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-3P
- Package / Case: TO-3P-3, SC-65-3
Related Products
Diodes Incorporated
DMTH47M2LPSWQ-13
Infineon Technologies
IAUS165N08S5N029ATMA1
Taiwan Semiconductor Corporation
TSM250N02CX RFG
Nexperia USA Inc.
BUK6D23-40EX
Vishay Siliconix
2N7002K-T1-GE3
NXP Semiconductors
PSMN4R3-80PS,127
Nexperia USA Inc.
BUK7604-40A,118
IXYS
IXFX20N120P
EPC
EPC8004
Alpha & Omega Semiconductor Inc.