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PSMN4R3-80PS,127

NXP Semiconductors
PSMN4R3-80PS,127 Preview
NXP Semiconductors
NEXPERIA PSMN4R3-80PS - 120A, 80
$1.55
Available to order
Reference Price (USD)
1+
$3.12000
50+
$2.51380
100+
$2.26240
500+
$1.75964
1,000+
$1.45799
Exquisite packaging
Discount
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Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80 V
  • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 4.3mOhm @ 25A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 8161 pF @ 40 V
  • FET Feature: -
  • Power Dissipation (Max): 306W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3

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