TK65E10N1,S1X
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
MOSFET N CH 100V 148A TO220
$2.78
Available to order
Reference Price (USD)
1+
$2.66000
50+
$2.14500
100+
$1.93050
500+
$1.50150
1,000+
$1.24410
2,500+
$1.20120
Exquisite packaging
Discount
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Optimize your electronic systems with TK65E10N1,S1X, a high-quality Transistors - FETs, MOSFETs - Single from Toshiba Semiconductor and Storage. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, TK65E10N1,S1X provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 148A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 4.8mOhm @ 32.5A, 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 192W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220
- Package / Case: TO-220-3
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