IRFR120PBF-BE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 100V 7.7A DPAK
$1.29
Available to order
Reference Price (USD)
1+
$1.29000
500+
$1.2771
1000+
$1.2642
1500+
$1.2513
2000+
$1.2384
2500+
$1.2255
Exquisite packaging
Discount
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Boost your electronic applications with IRFR120PBF-BE3, a reliable Transistors - FETs, MOSFETs - Single by Vishay Siliconix. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, IRFR120PBF-BE3 meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: 270mOhm @ 4.6A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252AA
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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