NX3020NAK,215
Nexperia USA Inc.
Nexperia USA Inc.
MOSFET N-CH 30V 200MA TO236AB
$0.25
Available to order
Reference Price (USD)
3,000+
$0.04281
6,000+
$0.03773
15,000+
$0.03265
30,000+
$0.03095
75,000+
$0.02926
150,000+
$0.02587
Exquisite packaging
Discount
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Discover NX3020NAK,215, a versatile Transistors - FETs, MOSFETs - Single solution from Nexperia USA Inc., a trusted name in Discrete Semiconductor Products. This MOSFET combines high power density with low on-resistance, perfect for compact and energy-efficient designs. Applications include solar inverters, electric vehicles, and wearable technology. Interested in this innovative component? Send us your inquiry now for more information!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
- Rds On (Max) @ Id, Vgs: 4.5Ohm @ 100mA, 10V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.44 nC @ 4.5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 13 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 300mW (Ta), 1.06W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-236AB
- Package / Case: TO-236-3, SC-59, SOT-23-3
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