NTZS3151PT1H
onsemi
onsemi
MOSFET P-CH 20V 860MA SOT563-6
$0.08
Available to order
Reference Price (USD)
1+
$0.08000
500+
$0.0792
1000+
$0.0784
1500+
$0.0776
2000+
$0.0768
2500+
$0.076
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
onsemi presents NTZS3151PT1H, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, NTZS3151PT1H delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Obsolete
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 860mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs: 150mOhm @ 950mA, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 4.5 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 458 pF @ 16 V
- FET Feature: -
- Power Dissipation (Max): 170mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-563
- Package / Case: SOT-563, SOT-666
Related Products
Infineon Technologies
ISC007N04NM6ATMA1
Infineon Technologies
IRFH6200TRPBF
Vishay Siliconix
SIHF065N60E-GE3
Nexperia USA Inc.
PMN42XPE,115
Vishay Siliconix
SI1012X-T1-GE3
Infineon Technologies
IPB60R280C6ATMA1
STMicroelectronics
STL57N65M5
Infineon Technologies
IPI90R1K2C3XKSA2
Vishay Siliconix
SI2306BDS-T1-GE3
Nexperia USA Inc.