IRFH6200TRPBF
Infineon Technologies
Infineon Technologies
MOSFET N-CH 20V 49A/100A 8PQFN
$2.37
Available to order
Reference Price (USD)
4,000+
$0.87100
8,000+
$0.84240
12,000+
$0.82680
Exquisite packaging
Discount
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Boost your electronic applications with IRFH6200TRPBF, a reliable Transistors - FETs, MOSFETs - Single by Infineon Technologies. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, IRFH6200TRPBF meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 49A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
- Rds On (Max) @ Id, Vgs: 0.95mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id: 1.1V @ 150µA
- Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 4.5 V
- Vgs (Max): ±12V
- Input Capacitance (Ciss) (Max) @ Vds: 10890 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 3.6W (Ta), 156W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-PQFN (5x6)
- Package / Case: 8-PowerVDFN
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