IRF300P226
Infineon Technologies
Infineon Technologies
MOSFET N-CH 300V 100A TO247AC
$11.31
Available to order
Reference Price (USD)
1+
$8.61000
10+
$7.74700
400+
$5.85310
800+
$4.92349
1,200+
$4.64805
Exquisite packaging
Discount
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Boost your electronic applications with IRF300P226, a reliable Transistors - FETs, MOSFETs - Single by Infineon Technologies. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, IRF300P226 meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 300 V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 19mOhm @ 45A, 10V
- Vgs(th) (Max) @ Id: 4V @ 270µA
- Gate Charge (Qg) (Max) @ Vgs: 191 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 10030 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 556W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247AC
- Package / Case: TO-247-3
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