NVMYS3D5N04CTWG
onsemi
onsemi
MOSFET N-CH 40V 24A/102A LFPAK4
$1.05
Available to order
Reference Price (USD)
1+
$1.04989
500+
$1.0393911
1000+
$1.0288922
1500+
$1.0183933
2000+
$1.0078944
2500+
$0.9973955
Exquisite packaging
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose NVMYS3D5N04CTWG by onsemi. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with NVMYS3D5N04CTWG inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 102A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 3.3mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 60µA
- Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 3.6W (Ta), 68W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LFPAK4 (5x6)
- Package / Case: SOT-1023, 4-LFPAK
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