TSM220NB06CR RLG
Taiwan Semiconductor Corporation
Taiwan Semiconductor Corporation
MOSFET N-CH 60V 8A/35A 8PDFN
$1.76
Available to order
Reference Price (USD)
2,500+
$0.27260
5,000+
$0.26320
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Boost your electronic applications with TSM220NB06CR RLG, a reliable Transistors - FETs, MOSFETs - Single by Taiwan Semiconductor Corporation. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, TSM220NB06CR RLG meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 22mOhm @ 8A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1454 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 3.1W (Ta), 68W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-PDFN (5x6)
- Package / Case: 8-PowerTDFN
Related Products
STMicroelectronics
STF9NK90Z
Renesas Electronics America Inc
2SK2570ZL-TL-E
Microchip Technology
APT20M16LFLLG
Vishay Siliconix
SISS22LDN-T1-GE3
Alpha & Omega Semiconductor Inc.
AOWF11N70
Vishay Siliconix
SIHP17N80AEF-GE3
Toshiba Semiconductor and Storage
SSM3K15AMFV,L3F
Renesas Electronics America Inc
NP89N055PUK-E1-AY
NXP USA Inc.
BUK7E2R7-30B,127
Nexperia USA Inc.