SQJA82EP-T1_GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 80V 60A PPAK SO-8
$1.25
Available to order
Reference Price (USD)
3,000+
$0.51168
6,000+
$0.48766
15,000+
$0.47050
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Vishay Siliconix presents SQJA82EP-T1_GE3, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, SQJA82EP-T1_GE3 delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 8.2mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 68W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® SO-8
- Package / Case: PowerPAK® SO-8
Related Products
onsemi
NTD3817N-35G
Taiwan Semiconductor Corporation
TSM220NB06CR RLG
STMicroelectronics
STF9NK90Z
Renesas Electronics America Inc
2SK2570ZL-TL-E
Microchip Technology
APT20M16LFLLG
Vishay Siliconix
SISS22LDN-T1-GE3
Alpha & Omega Semiconductor Inc.
AOWF11N70
Vishay Siliconix
SIHP17N80AEF-GE3
Toshiba Semiconductor and Storage
SSM3K15AMFV,L3F
Renesas Electronics America Inc