NVMFWS027N10MCLT1G
onsemi
onsemi
PTNG 100V LL SO8FL
$0.46
Available to order
Reference Price (USD)
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$0.46283
500+
$0.4582017
1000+
$0.4535734
1500+
$0.4489451
2000+
$0.4443168
2500+
$0.4396885
Exquisite packaging
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose NVMFWS027N10MCLT1G by onsemi. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with NVMFWS027N10MCLT1G inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 7.9A (Ta), 28A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 26mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id: 3V @ 38µA
- Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 3.5W (Ta), 46W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount, Wettable Flank
- Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
- Package / Case: 8-PowerTDFN, 5 Leads
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