NTMTSC4D2N10GTXG
onsemi
onsemi
100V MVSOA IN DFNW8(PQFN8X8) PAC
$3.46
Available to order
Reference Price (USD)
1+
$3.45853
500+
$3.4239447
1000+
$3.3893594
1500+
$3.3547741
2000+
$3.3201888
2500+
$3.2856035
Exquisite packaging
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Enhance your circuit performance with NTMTSC4D2N10GTXG, a premium Transistors - FETs, MOSFETs - Single from onsemi. As part of the Discrete Semiconductor Products lineup, this MOSFET excels in delivering high-speed switching and low power consumption. Its advanced design reduces heat generation and improves efficiency, suitable for power supplies, motor controls, and LED lighting. Trust NTMTSC4D2N10GTXG for consistent quality and long-lasting performance. For bulk orders or custom specifications, reach out to our sales team today!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 178A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 4.2mOhm @ 88A, 10V
- Vgs(th) (Max) @ Id: 4V @ 450µA
- Gate Charge (Qg) (Max) @ Vgs: 159 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 10450 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 3.9W (Ta), 267W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount, Wettable Flank
- Supplier Device Package: 8-TDFNW (8.3x8.4)
- Package / Case: 8-PowerTDFN
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