NP35N055YUK-E1-AY
Renesas Electronics America Inc
Renesas Electronics America Inc
MOSFET N-CH 55V 35A 8HSON
$0.75
Available to order
Reference Price (USD)
1+
$0.74649
500+
$0.7390251
1000+
$0.7315602
1500+
$0.7240953
2000+
$0.7166304
2500+
$0.7091655
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Boost your electronic applications with NP35N055YUK-E1-AY, a reliable Transistors - FETs, MOSFETs - Single by Renesas Electronics America Inc. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, NP35N055YUK-E1-AY meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55 V
- Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 6.7mOhm @ 18A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 3360 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 1W (Ta), 97W (Tc)
- Operating Temperature: 175°C
- Mounting Type: Surface Mount
- Supplier Device Package: 8-HSON
- Package / Case: 8-SMD, Flat Lead Exposed Pad
Related Products
onsemi
5HN02M-TL-E
Diodes Incorporated
DMG7408SFG-7
Harris Corporation
IRFD313
onsemi
NTMTSC4D2N10GTXG
Diodes Incorporated
DMTH10H015SPSQ-13
onsemi
NTTFS024N06CTAG
Vishay Siliconix
SIR826LDP-T1-RE3
Infineon Technologies
IPTG014N10NM5ATMA1
Diodes Incorporated
DMT10H015LFG-7
Renesas Electronics America Inc