NVMFS6H824NT1G
onsemi
onsemi
MOSFET N-CH 80V 19A/103A 5DFN
$1.81
Available to order
Reference Price (USD)
1,500+
$0.72979
3,000+
$0.68114
7,500+
$0.64709
10,500+
$0.62276
Exquisite packaging
Discount
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Optimize your electronic systems with NVMFS6H824NT1G, a high-quality Transistors - FETs, MOSFETs - Single from onsemi. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, NVMFS6H824NT1G provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 103A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 4V @ 140µA
- Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2470 pF @ 40 V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 115W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 5-DFN (5x6) (8-SOFL)
- Package / Case: 8-PowerTDFN, 5 Leads
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