DMG4413LSS-13
Diodes Incorporated
Diodes Incorporated
MOSFET P-CH 30V 10.5A 8SOP
$0.99
Available to order
Reference Price (USD)
2,500+
$0.45240
5,000+
$0.43238
12,500+
$0.41808
25,000+
$0.41600
Exquisite packaging
Discount
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DMG4413LSS-13 by Diodes Incorporated is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, DMG4413LSS-13 ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 7.5mOhm @ 13A, 10V
- Vgs(th) (Max) @ Id: 2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 4965 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 1.7W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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