TK3R3E08QM,S1X
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
UMOS10 TO-220AB 80V 3.3MOHM
$2.24
Available to order
Reference Price (USD)
1+
$2.24000
500+
$2.2176
1000+
$2.1952
1500+
$2.1728
2000+
$2.1504
2500+
$2.128
Exquisite packaging
Discount
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Enhance your circuit performance with TK3R3E08QM,S1X, a premium Transistors - FETs, MOSFETs - Single from Toshiba Semiconductor and Storage. As part of the Discrete Semiconductor Products lineup, this MOSFET excels in delivering high-speed switching and low power consumption. Its advanced design reduces heat generation and improves efficiency, suitable for power supplies, motor controls, and LED lighting. Trust TK3R3E08QM,S1X for consistent quality and long-lasting performance. For bulk orders or custom specifications, reach out to our sales team today!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 3.3mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 1.3mA
- Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 7670 pF @ 40 V
- FET Feature: -
- Power Dissipation (Max): 230W (Tc)
- Operating Temperature: 175°C
- Mounting Type: Through Hole
- Supplier Device Package: TO-220
- Package / Case: TO-220-3
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