NVH4L027N65S3F
onsemi
onsemi
SF3 FRFET AUTO 27MOHM TO-247-4L
$15.35
Available to order
Reference Price (USD)
1+
$15.35187
500+
$15.1983513
1000+
$15.0448326
1500+
$14.8913139
2000+
$14.7377952
2500+
$14.5842765
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your electronic designs with NVH4L027N65S3F by onsemi, a top-tier choice in Discrete Semiconductor Products. Specifically crafted for Transistors - FETs, MOSFETs - Single applications, this product offers superior power handling and energy efficiency. Key features include high voltage tolerance, minimal power loss, and robust durability, making it perfect for switching and amplification tasks. Whether for industrial machinery, renewable energy systems, or portable devices, NVH4L027N65S3F ensures reliable operation. Ready to integrate this component into your project? Submit an inquiry now for pricing and availability!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 27.4mOhm @ 35A, 10V
- Vgs(th) (Max) @ Id: 5V @ 3mA
- Gate Charge (Qg) (Max) @ Vgs: 227 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 7780 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 595W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-4L
- Package / Case: TO-247-4
Related Products
Renesas Electronics America Inc
2SK1060-AZ
Infineon Technologies
IPF039N08NF2SATMA1
Diodes Incorporated
DMNH6021SPSQ-13
Renesas Electronics America Inc
H5N2307LSTL-E
Infineon Technologies
BSC016N06NSSCATMA1
Vishay Siliconix
SI8819EDB-T2-E1
Alpha & Omega Semiconductor Inc.
AONS1R6A70
Diotec Semiconductor
DI150N03PQ
Harris Corporation
RFP2P08
Micro Commercial Co