BSC016N06NSSCATMA1
Infineon Technologies
Infineon Technologies
TRENCH 40<-<100V PG-WSON-8
$2.19
Available to order
Reference Price (USD)
1+
$2.19320
500+
$2.171268
1000+
$2.149336
1500+
$2.127404
2000+
$2.105472
2500+
$2.08354
Exquisite packaging
Discount
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Infineon Technologies presents BSC016N06NSSCATMA1, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, BSC016N06NSSCATMA1 delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 234A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 1.6mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id: 3.3V @ 95µA
- Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 167W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TDSON-8
- Package / Case: 8-PowerTDFN
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