IPI90R1K2C3XKSA2
Infineon Technologies
Infineon Technologies
MOSFET N-CH 900V 5.1A TO262-3
$0.79
Available to order
Reference Price (USD)
1+
$0.78583
500+
$0.7779717
1000+
$0.7701134
1500+
$0.7622551
2000+
$0.7543968
2500+
$0.7465385
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your electronic systems with IPI90R1K2C3XKSA2, a high-quality Transistors - FETs, MOSFETs - Single from Infineon Technologies. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, IPI90R1K2C3XKSA2 provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Not For New Designs
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 900 V
- Current - Continuous Drain (Id) @ 25°C: 5.1A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.8A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 310µA
- Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 83W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO262-3-1
- Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Related Products
Vishay Siliconix
SI2306BDS-T1-GE3
Nexperia USA Inc.
PMCM4401UNEZ
Vishay Siliconix
SIHP125N60EF-GE3
Nexperia USA Inc.
PSMN7R6-60BS,118
Torex Semiconductor Ltd
XP263N1001TR-G
Renesas Electronics America Inc
HAF2012-92L
Vishay Siliconix
SQ3469EV-T1_GE3
Vishay Siliconix
SIDR638DP-T1-RE3
IXYS
IXFN38N100P
Infineon Technologies