NTMTSC1D6N10MCTXG
onsemi
onsemi
MOSFET N-CH 100V 35A/267A 8TDFNW
$7.04
Available to order
Reference Price (USD)
1+
$7.04000
500+
$6.9696
1000+
$6.8992
1500+
$6.8288
2000+
$6.7584
2500+
$6.688
Exquisite packaging
Discount
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Experience the power of NTMTSC1D6N10MCTXG, a premium Transistors - FETs, MOSFETs - Single from onsemi. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, NTMTSC1D6N10MCTXG is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 267A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: 1.7mOhm @ 90A, 10V
- Vgs(th) (Max) @ Id: 4V @ 650µA
- Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 7630 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 5.1W (Ta), 291W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount, Wettable Flank
- Supplier Device Package: 8-TDFNW (8.3x8.4)
- Package / Case: 8-PowerTDFN
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