NTMS5P02R2G
onsemi
onsemi
MOSFET P-CH 20V 3.95A 8SOIC
$0.92
Available to order
Reference Price (USD)
2,500+
$0.28710
5,000+
$0.26730
12,500+
$0.25740
25,000+
$0.25200
Exquisite packaging
Discount
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Discover NTMS5P02R2G, a versatile Transistors - FETs, MOSFETs - Single solution from onsemi, a trusted name in Discrete Semiconductor Products. This MOSFET combines high power density with low on-resistance, perfect for compact and energy-efficient designs. Applications include solar inverters, electric vehicles, and wearable technology. Interested in this innovative component? Send us your inquiry now for more information!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 3.95A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 33mOhm @ 5.4A, 4.5V
- Vgs(th) (Max) @ Id: 1.25V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 4.5 V
- Vgs (Max): ±10V
- Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 16 V
- FET Feature: -
- Power Dissipation (Max): 790mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOIC
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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