IPT60R105CFD7XTMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 600V 24A 8HSOF
$6.85
Available to order
Reference Price (USD)
1+
$6.85000
500+
$6.7815
1000+
$6.713
1500+
$6.6445
2000+
$6.576
2500+
$6.5075
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover high-performance IPT60R105CFD7XTMA1 from Infineon Technologies, a leading solution in the Discrete Semiconductor Products category. Our Transistors - FETs, MOSFETs - Single are designed for efficiency and reliability, making them ideal for various electronic applications. These components feature low on-resistance, fast switching speeds, and excellent thermal performance, ensuring optimal functionality in power management and amplification circuits. Commonly used in automotive, industrial, and consumer electronics, IPT60R105CFD7XTMA1 delivers consistent performance under demanding conditions. Interested in learning more? Contact us today for a detailed quote and technical support!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 105mOhm @ 7.8A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 390µA
- Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1503 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 140W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-HSOF-8-1
- Package / Case: 8-PowerSFN
Related Products
Microchip Technology
VP2206N2
Nexperia USA Inc.
BUK7M33-60EX
IXYS
IXFH80N25X3
Infineon Technologies
IRLSL4030PBF
IXYS
IXFT80N65X2HV
onsemi
NTP190N65S3HF
Renesas Electronics America Inc
2SK2499-AZ
Infineon Technologies
ISS17EP06LMXTSA1
IXYS
IXFH24N90P
Infineon Technologies