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NTP190N65S3HF

onsemi
NTP190N65S3HF Preview
onsemi
MOSFET N-CH 650V 20A TO220-3
$3.20
Available to order
Reference Price (USD)
1+
$3.20000
500+
$3.168
1000+
$3.136
1500+
$3.104
2000+
$3.072
2500+
$3.04
Exquisite packaging
Discount
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Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 430µA
  • Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 1610 pF @ 400 V
  • FET Feature: -
  • Power Dissipation (Max): 162W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3

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