NTMJS1D15N03CGTWG
onsemi
onsemi
WIDE SOA
$2.76
Available to order
Reference Price (USD)
1+
$2.75500
500+
$2.72745
1000+
$2.6999
1500+
$2.67235
2000+
$2.6448
2500+
$2.61725
Exquisite packaging
Discount
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose NTMJS1D15N03CGTWG by onsemi. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with NTMJS1D15N03CGTWG inquire now for more details!
Specifications
- Product Status: Last Time Buy
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 45A (Ta), 257A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 1.15mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 160µA
- Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 125W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-LFPAK
- Package / Case: SOT-1205, 8-LFPAK56
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