FDY302NZ
onsemi
onsemi
MOSFET N-CH 20V 600MA SC89-3
$0.43
Available to order
Reference Price (USD)
3,000+
$0.07590
6,000+
$0.06831
15,000+
$0.06072
30,000+
$0.05693
75,000+
$0.05047
150,000+
$0.04858
Exquisite packaging
Discount
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Discover high-performance FDY302NZ from onsemi, a leading solution in the Discrete Semiconductor Products category. Our Transistors - FETs, MOSFETs - Single are designed for efficiency and reliability, making them ideal for various electronic applications. These components feature low on-resistance, fast switching speeds, and excellent thermal performance, ensuring optimal functionality in power management and amplification circuits. Commonly used in automotive, industrial, and consumer electronics, FDY302NZ delivers consistent performance under demanding conditions. Interested in learning more? Contact us today for a detailed quote and technical support!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs: 300mOhm @ 600mA, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 4.5 V
- Vgs (Max): ±12V
- Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 625mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SC-89-3
- Package / Case: SC-89, SOT-490
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