IPI147N12N3GAKSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 120V 56A TO262-3
$0.90
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Reference Price (USD)
500+
$1.02852
Exquisite packaging
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose IPI147N12N3GAKSA1 by Infineon Technologies. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with IPI147N12N3GAKSA1 inquire now for more details!
Specifications
- Product Status: Discontinued at Digi-Key
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 120 V
- Current - Continuous Drain (Id) @ 25°C: 56A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 14.7mOhm @ 56A, 10V
- Vgs(th) (Max) @ Id: 4V @ 61µA
- Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 3220 pF @ 60 V
- FET Feature: -
- Power Dissipation (Max): 107W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO262-3
- Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
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