NTMFS6H852NT1G
onsemi
onsemi
TRENCH 8 80V NFET
$0.45
Available to order
Reference Price (USD)
1+
$0.45391
500+
$0.4493709
1000+
$0.4448318
1500+
$0.4402927
2000+
$0.4357536
2500+
$0.4312145
Exquisite packaging
Discount
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NTMFS6H852NT1G by onsemi is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, NTMFS6H852NT1G ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 14.2mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 4V @ 45µA
- Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 40 V
- FET Feature: -
- Power Dissipation (Max): 3.6W (Ta), 54W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 5-DFN (5x6) (8-SOFL)
- Package / Case: 8-PowerTDFN, 5 Leads
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