IAUC50N08S5N102ATMA1
Infineon Technologies
Infineon Technologies
MOSFET_(75V 120V( PG-TDSON-8
$0.71
Available to order
Reference Price (USD)
1+
$0.70940
500+
$0.702306
1000+
$0.695212
1500+
$0.688118
2000+
$0.681024
2500+
$0.67393
Exquisite packaging
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose IAUC50N08S5N102ATMA1 by Infineon Technologies. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with IAUC50N08S5N102ATMA1 inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 50A (Tj)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 10.2mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id: 3.8V @ 24µA
- Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1394 pF @ 40 V
- FET Feature: -
- Power Dissipation (Max): 60W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TDSON-8-33
- Package / Case: 8-PowerTDFN
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