2SJ635-TL-E
onsemi
onsemi
2SJ635 - P-CHANNEL SILICON MOSFE
$0.36
Available to order
Reference Price (USD)
1+
$0.36400
500+
$0.36036
1000+
$0.35672
1500+
$0.35308
2000+
$0.34944
2500+
$0.3458
Exquisite packaging
Discount
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Discover 2SJ635-TL-E, a versatile Transistors - FETs, MOSFETs - Single solution from onsemi, a trusted name in Discrete Semiconductor Products. This MOSFET combines high power density with low on-resistance, perfect for compact and energy-efficient designs. Applications include solar inverters, electric vehicles, and wearable technology. Interested in this innovative component? Send us your inquiry now for more information!
Specifications
- Product Status: Obsolete
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Rds On (Max) @ Id, Vgs: 60mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id: 2.6V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 20 V
- FET Feature: -
- Power Dissipation (Max): 1W (Ta), 30W (Tc)
- Operating Temperature: 150°C
- Mounting Type: Through Hole
- Supplier Device Package: TP
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
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